Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1997-04-08
2000-12-05
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257448, 257457, 257458, 257459, H01L 3100, H01L 31075
Patent
active
061570729
ABSTRACT:
The invention relates to an image sensor for use in the facsimile device, image reader, digital scanner and the like. In this image sensor, the photodiodes and blocking diodes formed on an insulating board are insulated by a transparent interlayer insulating film and are connected in series and opposite polarity by coupling electrodes through contact holes in the transparent interlayer insulating film. This image sensor features a high reading speed and a low dark output noise.
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Hosokawa Yoichi
Kobayashi Kenji
Murakami Satoru
Nakayama Takehisa
Obayashi Tadashi
Kanegafuchi Chemical Industry Co. Ltd.
Ngo Ngan V.
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