Image sensor

Details Image sensor Image sensor

2009-12-28

2011-12-13

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S446000, C257SE31127, C257SE31110, C438S069000, C438S070000, C438S071000, C438S072000

Reexamination Certificate

active

08076743

ABSTRACT:
Embodiments relate to an image sensor and a method of manufacturing the image sensor. An image sensor according to the embodiment includes: silicon patterns that are formed on a flexible substrate; a device isolation pattern that is formed between the silicon patterns; a circuit layer that is formed on the silicon patterns and has a first isolation pattern directly connected with the device isolation pattern; and a wiring layer that is formed on the circuit layer and includes a second isolation pattern corresponding to the first isolation pattern, and a wiring electrically connected with the circuit layer. The embodiments provide a flexible image sensor that can be applied to a variety of products and a method of manufacturing the flexible image sensor.

REFERENCES:
patent: 6379992 (2002-04-01), Jo
patent: 7166484 (2007-01-01), Lee
patent: 2006/0060899 (2006-03-01), Hong et al.
patent: 2008/0296713 (2008-12-01), Lee et al.

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