Image sensor

Details Image sensor Image sensor

2009-07-23

2011-12-06

Dickey, Thomas L (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257SE31124, C257SE27130

Reexamination Certificate

active

08072038

ABSTRACT:
An image sensor having greatly improved physical and electrical bonding forces between a photodiode and a substrate, and a manufacturing method thereof. The image sensor includes a semiconductor substrate and readout circuitry, a dielectric layer on the semiconductor substrate, a metal line in the dielectric layer, electrically connected with the readout circuitry, an image sensing device including first and second impurity regions on the dielectric layer, a via hole through the dielectric layer and the image sensing device, a hard mask in the via hole, and a lower electrode in the via hole to connect the first impurity region with the metal line.

REFERENCES:
patent: 4737833 (1988-04-01), Tabei
patent: 2006/0290001 (2006-12-01), Sulfridge

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