Image sensor

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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Details

C257S444000, C257S443000, C257SE27111

Reexamination Certificate

active

07737516

ABSTRACT:
Embodiments relate to an image sensor and a method for manufacturing an image sensor. According to embodiments, a transistor structure may be manufactured on a semiconductor substrate, and an insulating layer covering the transistor structure may be formed. The insulating layer may be patterned to form a first via that may expose the semiconductor substrate, and a silicon layer may be formed on the first via and the insulating layer. The silicon layer and the insulating layer may be patterned to form a second via exposing the transistor structure, and the second via may be filled with metal to form a connecting line electrically connected with the transistor structure. Conductive impurities may be implanted into the silicon layer and may form a light receiving portion connected with the connecting line.

REFERENCES:
patent: 6373117 (2002-04-01), Theil
patent: 6501065 (2002-12-01), Uppal et al.
patent: 2004/0238911 (2004-12-01), Roy
patent: 2005/0067639 (2005-03-01), Jeon et al.
patent: 2006/0113622 (2006-06-01), Adkisson et al.
patent: 2006/0145217 (2006-07-01), Sohn
patent: 1020060108378 (2006-10-01), None
“The PN Junction Diode” vol. II second edition “Modular Seried on Solid State Devices” by Gerold W. Neudeck 1983 Addison-Wesley.
“Microchip Fabrication”—A Practical Guide to semiconductor processing, fourth edition. by Peter Van Zant year 2000 McGraw-Hill Professional Publishing.
Gerold W. Neudeck (“The PN Junction Diode” vol. II second edition “Modular Series on Solid State Devices”) 1989.

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