Image sensor

Details Image sensor Image sensor

2006-12-27

2009-06-23

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S071000, C438S072000, C257S232000, C257S291000

Reexamination Certificate

active

07550312

ABSTRACT:
Embodiments relate to an image sensor and a method of manufacturing an image sensor. In embodiments, the method may include preparing a semiconductor substrate formed with a plurality of photodiodes, forming an interlayer dielectric layer on the semiconductor substrate, forming a color filter layer on the interlayer dielectric layer, forming a planar layer on the color filter layer, and forming micro-lenses on the planar layer by using heat transfer liquid. Heat is uniformly applied to the micro-lens because the micro-lens is immersed in the heat transfer liquid having the high temperature, so the micro-lenses are prevented from being bonded to each other. Since a curvature surface of the micro-lens may be uniformly formed, the photo-sensitivity and color reproduction of the image sensor may be improved, which may result in a high-quality image sensor.

REFERENCES:
patent: 5025133 (1991-06-01), Tsutahara et al.
patent: 6171883 (2001-01-01), Fan et al.
patent: 2004/0147059 (2004-07-01), Jeong et al.

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