Image sensor

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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Details

C257S448000, C257S294000, C257SE31113, C257SE31124

Reexamination Certificate

active

07598583

ABSTRACT:
An image sensor according to embodiments may include a first substrate having photodiode cells, a second substrate having a logic circuit, and connection electrodes that may electrically connect the photodiode cells with the logic circuit. In embodiments, more area may be available on the first substrate for photodiode cells and light loss may be reduced.

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patent: 6476374 (2002-11-01), Kozlowski et al.
patent: 6891242 (2005-05-01), Gidon et al.
patent: 7436012 (2008-10-01), Mori et al.
patent: 7442572 (2008-10-01), Sohn
patent: 7495206 (2009-02-01), Park
patent: 2004/0033008 (2004-02-01), Mikawa et al.
patent: 2005/0253176 (2005-11-01), Pyo
patent: 2008/0251823 (2008-10-01), Lee
patent: 10-2006-0077132 (2006-07-01), None
patent: WO 2005/086236 (2005-09-01), None
Lee, K.W. [u.a.]: Development of Three-Dimensional Integration Technology for Highly Parallel Image-Processing Chip. In: Jpn.J.Appl. Phys. vol. 39, Nr. 4B, 2000, S. 2473-2477.
Fukushima, T.[u.]:New Three-Dimensional Integration Technology Using Chip-to-Wafer Bonding to Achieve Ultimate Super-Chip Integration.In:Jpn.J.Appl.Phys., vol. 45, Nr.4B,Apr. 2006.

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