Image sensor

Details Image sensor Image sensor

2006-07-20

2008-08-26

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S184000, C257S187000, C257S258000, C257SE31058

Reexamination Certificate

active

07417268

ABSTRACT:
An image sensor including a pixel assembly, each pixel including a photodiode and an access transistor connected to a read circuit, the photodiode and the access transistor being formed in and above a first semiconductor substrate, all or part of the read circuit being formed in a second semiconductor substrate, the second substrate being placed above the first substrate and separated therefrom by an intermediary insulating layer covering the access transistor, the photodiode receiving incident photons on its lower surface side opposite to the intermediary insulating layer.

REFERENCES:
patent: 5254868 (1993-10-01), Saito
patent: 2004/0238911 (2004-12-01), Francois
patent: 1 387 397 (2004-02-01), None
French Search Report from French Patent Application 05/52260, filed Jul. 21, 2005.
Patent Abstracts of Japan vol. 2002, No. 04, Aug. 4, 2002 & JP 2001 339057 A (Koyanagi Mitsumasa; Fuji Xerox Co., Ltd.), Dec. 7, 2001.
Kurino H. et al. “Intelligent image snesor chip with three dimensional structure” Electron Devices Meeting, 1999. IEDM Technical Digest, International Washington, DC, USA Dec. 5-8, 1999, Piscataway, NJ, USA, IEEE, US, Dec. 5, 1999, pp. 879-882, XP010372201 ISBN: 0-7803-5410-9.

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