Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2006-11-07
2006-11-07
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S215000, C257S237000, C257S238000, C257S239000, C257SE27082, C257S246000
Reexamination Certificate
active
07132702
ABSTRACT:
In the present invention, a charge transfer unit is arranged on a first-plane side of a thinly-formed semiconductor base. Charge accumulating units are arranged on a second-plane side, the opposite side. A depletion prevention layer is arranged closer to the second-plane side than the charge accumulating units. The depletion prevention layer prevents a depletion region around the charge accumulating units from reaching the second plane of the semiconductor base. The depletion prevention layer can suppress surface dark current going into the charge accumulating units. Meanwhile, an energy ray incident from the second-plane side pass through the depletion prevention layer to generate signal charges in the charge accumulating units (depletion regions). The charge accumulating units collect, on a pixel-by-pixel basis, the signal charges which are to be transported to the charge transfer unit under voltage control or the like, and then are read to exterior as image signals.
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Akagawa Keiichi
Narui Tadashi
Yagi Takeshi
Gilster Peter S.
Greensfelder Hemker & Gale, P.C.
Lee Eugene
Nikon Corporation
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