Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2011-05-17
2011-05-17
Dang, Phuc T (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S094000, C257S103000, C438S016000, C438S029000
Reexamination Certificate
active
07944014
ABSTRACT:
Embodiments relate to a method of manufacturing an image sensor which includes forming a plurality of lower layers over a semiconductor substrate. A first passivation layer may be formed over the lower layers to protect the lower layers. The first passivation layer may be formed in a pixel region and a peripheral region with different thicknesses. A spin-on-glass (SOG) layer may be formed over the first passivation layer. A second passivation layer may be formed over the SOG layer. Array etching may be used to form a concave area in the semiconductor substrate. A plurality of micro lenses may be formed over the bottom surface of the concave area.
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patent: 7098115 (2006-08-01), Tanaka et al.
patent: 7569422 (2009-08-01), Lin
patent: 2003/0197178 (2003-10-01), Yamazaki et al.
patent: 2007/0158772 (2007-07-01), Boettiger
patent: 1020060091343 (2006-08-01), None
Dang Phuc T
Dongbu Hi-Tek Co., Ltd.
Sherr & Vaughn, PLLC
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