Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1991-10-07
1993-06-01
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257435, 257459, H01L 2714, H01L 3100
Patent
active
052162745
ABSTRACT:
Each light-receiving element of an image sensor consists of a photodiode and a blocking diode which are connected in series such that their poles of the same type are connected to each other. Each of the photodiode and the blocking diode has, on a common base electrode, an ohmic contact layer, a photoconductive layer and a transparent electrode. The photodiode and the blocking diode are arranged side by side to extend along one direction. Two lead lines are connected to the respective transparent electrodes through holes formed in an insulating layer. Each lead line covers end portions of both the transparent electrodes of the photodiode and the blocking diode. Typically, the two transparent electrodes have an equal area.
REFERENCES:
patent: 4714836 (1987-12-01), Kitamura et al.
patent: 4764682 (1988-08-01), Swartz
patent: 4826777 (1989-05-01), Ondris
patent: 4827117 (1989-05-01), Uchida et al.
patent: 5097120 (1992-03-01), Kitamura et al.
Crane Sara W.
Fuji 'Xerox Co., Ltd.
James Andrew J.
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