Image sensor

Electric lamp and discharge devices – Cathode ray tube – Image pickup tube

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Details

313365, 313366, 357 32, 357 30, H01J 3126, H01L 2714

Patent

active

050178288

ABSTRACT:
An improved image sensor made of photosensitive semiconductor materials with a number of pixels each including an n-type semiconductor layer, a p-type semiconductor layer and an intrinsic semiconductor layer disposed between the n-type and p-type layers. The n-type and p-type layers are made from a semiconductor material having a high resistivity. The high resistivity of the n-type layer and the p-type layer functions to prevent crosstalk currents from passing between the pixels.

REFERENCES:
patent: 4754152 (1988-06-01), Hayama et al.
patent: 4868623 (1989-09-01), Nishiura

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