Image sensor

Details Image sensor Image sensor

1990-05-29

1992-01-21

James,, Andrew

357 30, 357 2, 357 4, H01L 2948

Patent

active

050831712

ABSTRACT:
In an image sensor, photoelectric transducers each consisting of a pair of a photodiode and a blocking diode, each of which has a semiconductor layer of an amorphous silicon thin film and two opposing electrodes sandwiching the semiconductor layer therebetween, are aligned in an array on a single substrate and are driven by matrix-wirings. One of the two electrodes serves as a light-receiving side electrode and the other electrode serves as an ohmic contact electrode. One of the light-receiving side electrode and the ohmic contact electrode is formed common to the pair of the photodiode and the blocking diode. Each of the photodiode and the blocking diode is formed by a Schottky junction between the semiconductor layer and the light-receiving side electrode.

REFERENCES:
patent: 4251289 (1981-02-01), Moustakas et al.
patent: 4492810 (1985-01-01), Ovshinsky et al.
patent: 4732873 (1988-03-01), Perbet et al.
patent: 4764682 (1988-08-01), Swartz
patent: 4811069 (1989-03-01), Kakinuma
patent: 4868616 (1989-09-01), Johnson et al.
Sze, Semiconductor Devices:Physics and Technology, 1985, p. 1.

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