Image sensing structure

Details Image sensing structure Image sensing structure

2007-10-30

2007-10-30

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

C257S187000, C257S226000, C257S291000

Reexamination Certificate

active

10786878

ABSTRACT:
A CMOS image sensing structure includes a photodiode, in which an epitaxial layer is on a P-type substrate. The photodiode includes an N-well collection node in the epitaxial layer. An isolation trench is provided around the collection node to provide better control of the width of the collection node. The collection node can be surrounded by P-wells or by epitaxial material. It can also be surrounded by epitaxial material with the isolation trench being outwardly extended to ensure compliance with existing design rules.

REFERENCES:
patent: 6140156 (2000-10-01), Tsai
patent: 6472699 (2002-10-01), Sugiyama et al.
patent: 6569700 (2003-05-01), Yang
patent: 6661047 (2003-12-01), Rhodes
patent: 6723594 (2004-04-01), Rhodes
patent: 2001/0055832 (2001-12-01), Schmitz et al.
patent: 2002/0171097 (2002-11-01), Chen et al.

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