Image sensing device with reduced smear

Details Image sensing device with reduced smear Image sensing device with reduced smear

1991-01-22

1992-01-28

Hille, Rolf

357 19, 357 2311, 357 24, H01L 2714, H01L 3100, H01L 2971, H01L 2906

Patent

active

050847490

ABSTRACT:
In interline transfer type image sensing devices, image smear is produced when light is allowed to penetrate into the charge transfer regions of the device. In this disclosure, a device with improved light shielding, and, hence, reduced smear, is described. The device incorporates WSi.sub.x (wherein x<2) refractory opaque material for the light shield which is placed in close proximity to the semiconductor surface, and a flowed glass planarization layer is disposed over the light shield.

REFERENCES:
patent: 4431900 (1984-02-01), Delfino et al.
patent: 4553153 (1985-11-01), McColgin et al.
patent: 4621275 (1986-11-01), Ueno et al.
"The Tungsten-Rich Region of the Tungsten-Molybdenum-Silicon system", B.S.A. Group Research Center, 1968, pp. 2-3.
Teranishi and Ishihara, IEEE Transactions on Electronic Devices, ED-34, 1052 (1987).

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