Image reading device with reduced variations among signal...

Details Image reading device with reduced variations among signal... Image reading device with reduced variations among signal...

2006-09-05

2006-09-05

Ometz, David (Department: 2622)

Television

Camera, system and detail

Solid-state image sensor

C257S452000, C257S435000

Reexamination Certificate

active

07102678

ABSTRACT:
In an image reading device having a plurality of photoelectric conversion elements formed in one or more rows on an IC chip and a conductor layer having openings formed therein for limiting light striking the photoelectric conversion elements, a conductor having substantially the same width as the conductor layer is formed in the area extending from the photoelectric conversion element located at each end of the IC chip to the chip edge. This arrangement helps make light shield conditions nearly equal for the photoelectric conversion element located at an end of the IC chip and for the other photoelectric conversion elements.

REFERENCES:
patent: 5349216 (1994-09-01), Lee et al.
patent: 5514887 (1996-05-01), Hokari
patent: 5696626 (1997-12-01), Hosier et al.
patent: 6066883 (2000-05-01), Hosier et al.
patent: 6157019 (2000-12-01), Hosier
patent: 6548323 (2003-04-01), Perry et al.
patent: 6590611 (2003-07-01), Ishida et al.

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