Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2006-05-23
2006-05-23
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S291000
Reexamination Certificate
active
07049643
ABSTRACT:
A image pickup element has a semiconductor substrate which includes a light receiving part, an electric charge readout part, and an electric charge transfer part. The element has a non-doping region which is away from a boundary on a side of the electric charge readout part within the light receiving surface and which does not include a first impurity for identifying threshold value of the electric charge readout part, and has a layer made of the first impurity, which is provided in a doping region outside the non-doping region, within the light receiving surface, in the electric charge readout part, and in the electric charge transfer part.
REFERENCES:
patent: 2004/0239787 (2004-12-01), Kawasaki
patent: 01-281764 (1989-11-01), None
Conlin David G.
Daley, Jr. William J.
Edwards Angell Palmer & & Dodge LLP
Prenty Mark V.
Sharp Kabushiki Kaisha
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