Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1995-06-06
1997-07-15
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257229, 257239, 257455, H01L 27148, H01L 29768
Patent
active
056486677
ABSTRACT:
Photo-sensing elements are arranged in a form of a matrix, with photo-sensing characteristics substantially equal with each other in a row direction, but different therebetween in a column direction. Vertical charge transfer circuits receive charge signals in parallel from the photo-sensing elements, and transfer them as serial data therealong, respectively, to a horizontal CCD, which receives respective lowermost signals of the serial data from the vertical charge transfer circuits and transfers them as a serial data therealong, in which associated signals are substantially free of siginificant irregularities therebetween, so that the horizontal charge transfer circuit has an improved apparent charge transfer efficiency and an optimized drive amplitude, in addition to that a signal amplification in a data processor may be achieved with an optimized gain.
REFERENCES:
patent: 4040076 (1977-08-01), Kosonocky et al.
patent: 4667213 (1987-05-01), Kosonocky
patent: 4866497 (1989-09-01), Kosonocky
patent: 5003565 (1991-03-01), Yoshida
Munson Gene M.
NEC Corporation
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