Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2003-10-08
2009-06-23
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S432000, C257SE31127
Reexamination Certificate
active
07550811
ABSTRACT:
The present invention relates to an image pickup device, etc., having a structure such that electrostatic discharge is unlikely to occur when an FOP and a CCD reading part are joined. This image pickup device comprises a semiconductor substrate, provided with the CCD reading part on a front surface that opposes a back surface, which serves as a light-incident surface, a package having a cavity in which the semiconductor substrate is fixed, a cover covering an upper opening of the cavity, an FOP joined to the semiconductor substrate, and electrical wirings. The cover has a guiding opening for inserting the FOP into the cavity, and the semiconductor substrate is thinned at a portion corresponding to a region at which the CCD reading part is disposed. Also, the semiconductor substrate is fixed to a bottom surface of the cavity such that the CCD reading part and the bottom surface face each other, and a light outgoing end surface of the FOP is optically coupled to the thin part of the semiconductor substrate in the state of being inserted into the cavity from the guiding opening.
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A.R. Faruqi et al., “A High Sensitivity Imaging Detector For Electron Microscopy”, Nuclear Instruments & Methods in Physics Research A 367 (1995), pp. 408-412.
A.R. Faruqi et al., “Digital Detectors For Electron Microscopy”, Nuclear Instruments & Methods in Physics Research A 478 (2002), pp. 88-97.
Kobayashi Hiroya
Muramatsu Masaharu
Ahmed Selim
Drinker Biddle & Reath LLP
Hamamatsu Photonics K.K.
Pert Evan
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