Television – Camera – system and detail – Solid-state image sensor
Reexamination Certificate
2005-08-29
2010-10-12
Ometz, David L (Department: 2622)
Television
Camera, system and detail
Solid-state image sensor
C348S308000, C348S302000, C257S431000, C257S450000
Reexamination Certificate
active
07812873
ABSTRACT:
Unit cells each having a plurality of photodiodes101aand101b, a plurality of transfer MOSFETs102aand102bprovided in correspondence to the plurality of photodiodes, respectively and a common amplifying MOSFET104for amplifying and outputting signals read out from the plurality of diodes are arranged two-dimensionally, and, plural photodiodes are disposed around the photodiode101band trapping regions130, 134, 135and132are for trapping excessive carriers from the photodiode101bare provided between the photodiode101band the plural photodiodes, respectively.
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Chapman et al., Creating 35 mm Camera Active Pixel Sensors, Proceedings of IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems, Nov. 1999, pp. 22-30.
Hiyama Hiroki
Ogura Masanori
Sakai Seiichiro
Canon Kabushiki Kaisha
Fitzpatrick ,Cella, Harper & Scinto
Ometz David L
Spinks Antoinette T
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