Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2006-03-16
2009-06-23
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S292000, C257SE27133
Reexamination Certificate
active
07550793
ABSTRACT:
The image pickup device of the invention has a path deeper in a semiconductor substrate, than a region wherein a channel is formed, upon turning on a first MOS transistor, under a gate thereof. The path is arranged by forming a P-type layer for forming a potential barrier, within a P-type well excluding a region below the gate of the first MOS transistor. Thus, even when the first transfer MOS transistor is securely turned off at accumulation, carriers overflowing from a photodiode can flow into the path, thereby enabling to accumulate the carriers, overflowing from the photodiode, in a carrier accumulation region. Such structure allows to suppress a dark current generation from an interface of a gate oxide film of the first transfer MOS transistor, and also to expand the dynamic range of the image pickup device by the carriers overflowing from the photodiode and flowing through the path into the carrier accumulation region.
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Itano Tetsuya
Kikuchi Shin
Koizumi Toru
Ogura Masanori
Okita Akira
Canon Kabushiki Kaisha
Fitzpatrick ,Cella, Harper & Scinto
Kuo W. Wendy
Tran Minh-Loan T
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