Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-10-24
2006-10-24
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S291000, C257S293000
Reexamination Certificate
active
07126158
ABSTRACT:
An image pickup apparatus or a radiation image pickup apparatus according to the present invention includes: a plurality of pixels which are two-dimensionally arranged on a substrate, each of the plurality of pixels including a set of a semiconductor conversion element that converts an incident electromagnetic wave into an electrical signal and a switching element connected with the semiconductor conversion element; a drive wiring which is commonly connected with the plurality of switching elements arranged in a direction; and a signal wiring which is commonly connected with the plurality of switching elements arranged in a direction different from the direction, the switching element including a first semiconductor layer, the semiconductor conversion element being formed after the switching elements are formed and including the second semiconductor layer formed after the first semiconductor layer is formed, in which the semiconductor conversion element has an electrode formed outside a region in which two of the drive wiring, an electrode of the switching element, and the signal wiring overlap each other, exclusive of at least part of a region above the drive wiring and at least part of a region above the electrode of the switching element.
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Morii Toshiko
Morishita Masakazu
Watanabe Minoru
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