Image masks for semiconductor lithography

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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430322, 430324, 378 34, 378 35, G03F 900

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active

055123953

ABSTRACT:
Fine, sub-micron line features and patterns are created in a sensitized layer on a semiconductor wafer by a beam of low wavelength radiation, such as X-rays. The X-ray source emits very low wavelength radiation along a path towards a sensitized surface of a semiconductor wafer. An image mask substrate is disposed in the path of the radiation, and is provided with opaque material on a surface thereof, forming a pattern. The image mask is spaced sufficiently close to the wafer that radiation passing through the mask forms a corresponding pattern in the surface of the wafer. For X-ray radiation, the opaqueing material is gold, tungsten, platinum, barium, lead, iridium, rhodium, or the like.

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