Image line sensor unit, photosensors for use in the sensor unit

Radiant energy – Invisible radiant energy responsive electric signalling – Semiconductor system

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357 30, G01T 122

Patent

active

047243236

ABSTRACT:
A photosensor comprising a photoconductive layer provided on a substrate. The layer contains amorphous silicon. At least a portion of the layer has a refractive index varying continuously through the thickness of the layer. The refractive index of the layer is 3.2 or less at a wavelength of 6,328 .ANG. in the vicinity of the surface of the substrate. A pair of electrodes are provided in electrical contact with the photoconductive layer. A photoreceptor is also provided, part of which is constituted by the spacing between the electrodes of the pair.

REFERENCES:
patent: 4249106 (1981-02-01), Maruyama et al.
patent: 4581099 (1986-04-01), Fukaya et al.
patent: 4651001 (1987-03-01), Harada et al.

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