Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Reexamination Certificate
2006-06-27
2006-06-27
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
C257S187000, C257S443000, C257S447000
Reexamination Certificate
active
07067853
ABSTRACT:
This invention discloses the design of a semiconductor-based image intensifier chip and its constituent photodetector array device based on sidewall-passivated mesa heterojunction phototransistors (HPTs).
REFERENCES:
patent: 5014096 (1991-05-01), Matsuda et al.
patent: 6037643 (2000-03-01), Knee
patent: 6667498 (2003-12-01), Makimoto et al.
J.-P. Vilcot, et al., “Edge-coupled InGaAs/InP phototransistors for microwave radio fibre links”, 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, pp. 163-168, Nov. 24-25, 1997.
M.C. Brain, and D.R. Smith, “Phototransistors in digital optical communication systems”, IEEE Journal of Quantum Electronics, vol. QE-19, No. 6, pp. 1139-1148, 1983.
Heinz Beneking, N.Grote, W.Roth, and M.N. Svilans, “GaAs-GaAlAs phototransistor/laser light amplifier”, Electron. Lett. (16),602, 1980.
Heinz Beneking, N. Grote, and M.N. Svilans, “Monolithic GaAlAs/GaAs infrared-to-visible wavelength converter with optical amplification”, IEEE Trans. Electron, Devices ED-28, 404, 1981.
C.Y.Chen, A.Y.Cho, P.A.Garbinski, C.G.Bethea, and B.F. Levine, “Modulated barrier photodiode: A new majority-carrier photodetector”, Applied Physics Letters, 39(4), 340-342, 1981.
J.C.Campbell, “Phototransistors for Lightwave Communications”, Chapter 5 of “Lightwave Communication Technology” Part D “Photodetectors”, Semiconductors and Semimetals edited by R.K. Willardson & Albert C. Beer: vol. 22 Lightwave Communication Technology edited by W.T. Tsang; Academic Press, 1985.
Weidong Zhou, et al., “Low-power phototransceiver arrays with vertically integrated resonant-cavity LEDs and heterostructure phototransistors”, IEEE Photonics Technology Letters, vol. 13, Issue 11, pp. 1218-1220, Nov. 2001.
O.Qasaimeh, et al., “Monolithically integrated low-power phototransceivers for optoelectronic parallel sensing and processing applications”, Journal of Lightwave Technology, vol. 19, Issue 4, pp. 546-552, Apr. 2001.
O.Qasaimeh, et al., “Monolithically integrated low-power phototransceiver incorporating microcavity LEDs and multiquantum-well phototransistors”, IEEE Photonics Technology Letters, vol. 12, Issue 12, pp. 1683-1685, Dec. 2000.
O.Qasaimeh, et al., “Ultra-low power monolithically integrated InGaAs/GaAs phototransceiver incorporating a modulated barrier photodiode and a quantum dot microcavity LED”, Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th IEEE Annual Meeting. vol. 1, pp. 285-286, Nov. 13-16, 2000.
S.-W.Tan, et al., “Characterization and Modeling of Three-Terminal Heterojunction Phototransistors Using an InGaP Layer for Passivation”, Electron Devices, IEEE Transactions on , vol.: 52 , Issue: 2 , pp. 204-210, Feb. 2005.
Der-Feng Guo, “Optoelectronic switch performance in double heterostructure emitter bipolar transistor”, Solid-State Electronics, vol. 45, pp. 1179-1182, 2001.
M.Shishikura, et al., “A symmetric double-core InGaAlAs waveguide photodiode for hybrid integration on optical platforms”, IEEE Lasers and Electro-Optics Society Annual Meeting, 1996. vol. 1, pp. 12-13, Nov. 18-19, 1996, Boston, MA U.S.A.
M.Shishikura, et al., “Highly reliable operation of InGaAlAs mesa-waveguide photodiodes in a humid ambient”, 11th Int'l Conf. on Integrated Optics and Optical Fibre Communications and 23rd European Conf. on Optical Communications, vol. 4, pp. 97-100, Sep. 22-25, 1997.
T.Chino, K.Matsuda, H.Adachi, J.Shibata, “Characteristics of photonic parallel memory in relation to fabrication process”, IEE Proceedings J. Optoelectronics, vol. 138, Issue 2, pp. 128-132, Apr. 1991.
T.Chino, H.Adachi, K.Matsuda, “A photonic parallel memory with air-bridge interconnections for large scale integration”, IEEE Photonics Technology Letters, vol. 5, Issue 5, pp. 548-551, May 1993.
Ying Huang, R.I.Hornsey, “Current-mode CMOS image sensor using lateral bipolar phototransistors”, IEEE Transactions on Electron Devices, vol. 50, Issue 12, pp. 2570-2573, Dec. 2003.
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