Image-forming member for electrophotography

Details Image-forming member for electrophotography Image-forming member for electrophotography

1982-09-15

1986-01-21

Robinson, Ellis P.

Stock material or miscellaneous articles

Structurally defined web or sheet

Including components having same physical characteristic in...

204192P, 204192S, 136258, 427 74, 427 93, 427 95, 428336, 428446, 428450, 428913, 428688, 428698, 430 64, 430 66, 430 67, 430 84, 430 95, 430 96, 430135, B32B 712, B32B 904, G03G 504, H01L 1300

Patent

active

045657319

ABSTRACT:
An image-forming member for electro-photography has a photoconductive layer comprising a hydrogenated amorphous semiconductor composed of silicon and/or germanium as a matrix and at least one chemical modifier such as carbon, nitrogen and oxygen contained in the matrix.

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patent: 4363823 (1982-12-01), Brodsky
Moustakas et al., Preparation of Highly Photoconductive Amorphous Silicon by RF Sputtering, Solid State Comm., vol. 23, pp. 155-158.
Thompson et al., R.F. Sputtered Amorphous Silicon Solar Cells, Proc. Int'l Photovoltaic Solar Energy Conf., Sep. 1977, Reidel Pub. Co.
"Electrical and Optical Properties of Amorphous Silicon Carbide, Silicon Nitride, and Germanium Carbide Prepared by Glow Discharge", Philosophical Magazine, vol. 35, pp. 1-16, (1977).
M. Le Contellec et al., "Effects of the Silc on to Carbon Ratio and the H Content of Amorp. S.C. Thin Films Prepared by Reactive Sputtering," Thin Solid Films, 58 (1979), pp. 407-411.

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