Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1995-06-07
1998-05-19
Monin, Donald
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 55, 257 59, H01L 1300, G03G 504
Patent
active
057539367
ABSTRACT:
An image-forming member for electro-photography has a photoconductive layer comprising a hydrogenated amorphous semiconductor composed of silicon and/or germanium as a matrix and at least one chemical modifier such as carbon, nitrogen and oxygen contained in the matrix.
REFERENCES:
patent: 3424661 (1969-01-01), Androshunk et al.
patent: 3607388 (1971-09-01), Hori et al.
patent: 3655438 (1972-04-01), Sterling et al.
patent: 3670198 (1972-06-01), Lehovec et al.
patent: 3943218 (1976-03-01), Dietze et al.
patent: 4064521 (1977-12-01), Carlson et al.
patent: 4109271 (1978-08-01), Pankove
patent: 4141764 (1979-02-01), Authier et al.
patent: 4142195 (1979-02-01), Carlson et al.
patent: 4147667 (1979-04-01), Chevallier et al.
patent: 4177474 (1979-12-01), Ovshinsky
patent: 4217374 (1980-08-01), Ovshinsky et al.
patent: 4225222 (1980-09-01), Kempter
patent: 4226897 (1980-10-01), Coleman
patent: 4226898 (1980-10-01), Ovshinsky et al.
patent: 4265991 (1981-05-01), Hirai et al.
patent: 4522663 (1985-06-01), Ovshinsky et al.
patent: 4525442 (1985-06-01), Shirai et al.
patent: 4664998 (1987-05-01), Komatsu et al.
Sze, S.M., Physics of Semiconductor Devices, John Wiley, 1981, pp. 32 & 293.
"Electrical and Optical Properties of Amorphous Silicon Carbide, Silicon Nitride and Germanium Carbide Prepared by Glow Dis-charge", Philosophical Magazine, vol. 35, pp. 1-16 (1977).
M. Le Contellec, et al., "Effects of the Silc on to Carbon Ratio and the H Content of Amorp. S.C. Thin Films Prepared by Reactive Sputtering," Thin Solid Films, 58 (1979) pp. 407-411.
Moustakas, et al. Preparation of Highly Photoconductive Amorphous Silicon by rf Sputtering, Solid State Comm., vol. 23, pp. 155-158.
Fukuda Tadaji
Hirai Yutaka
Komatsu Toshiyuki
Nakagawa Katsumi
Canon Kabushiki Kaisha
Monin Donald
LandOfFree
Image forming member for electrophotography does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Image forming member for electrophotography, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Image forming member for electrophotography will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1855354