Image forming apparatus with improved laser transmitting optical

Recorders – Printing – dotting – or punching marker – Ink transfer support or moving means

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346 11, G03G 1504

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active

052509613

ABSTRACT:
An image forming apparatus having a quantum-well semiconductor laser as a light source, a photosensitive member and an optical system for transmitting a laser beam emitted from said quantum-well semiconductor laser to the photosensitive member. The optical system has a reduced transmittance to suppress variations in the laser beam intensity within an allowable range. The transmittance of the optical system is adjusted by providing a reflecting coating on the beam emitting surface of the quantum-well semiconductor laser.

REFERENCES:
patent: 4679057 (1987-07-01), Hamada et al.
patent: 4839901 (1989-06-01), Mozer et al.
patent: 4841314 (1989-06-01), Ohmori
Superlattices & Microstructures, vol. 5, No. 2, 1989-AlGaAs/GaAs Superlattice Multi-Quantum-Well Laser Diode, by H. Imamoto et al. pp. 167-170.
IEEE Photonics Technology Letters vol. 1, No. 1, 1989-High Efficiency AlGaAs/GaAs Single-Quantum-Well Semiconductor Laser with Strained Superlattice Buffer Layer by K. Imanaka et al. pp. 8-10.
Applied Physics Letters vol. 54, No. 15, 1989-GaAs Double Quantum Well Laser Diode with Short-Period (AlGaAs)m(GaAs)n Superlattice Barriers by H. Imamoto et al. pp. 1388-1390.
Proceedings of SPIE-The International Society for Optical Engineering vol. 945-Advanced Processing of Semiconductor Devices II by Fumihiko Sato et al. Mar. 17-18 1988 pp. 18-21.
Journal of Crystal Growth 95 (1989) 206-209 North Holland, Amsterdam-High-Quality AlGaAs/GaAs Quantum Well with a Short Period (InGaAs) (GaAs) Strained Superlattice Buffer Layer by F. Sato et al.
Electronics Letters, Jan. 19, 1989 vol. 25, No. 2 pp. 121-122 Visible Multi-Quantum-Well Laser Diode Composed of (AlGaAs)m(GaAs)n Short Period Superlattice by H. Imamoto et al.

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