Image exposure device and laser exposure device applied thereto

Optical: systems and elements – Glare or unwanted light reduction

Reexamination Certificate

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C359S566000, C359S738000, C372S050110, C372S102000

Reexamination Certificate

active

11142254

ABSTRACT:
When a ratio R between a total angle φ of a widening angle in a median intensity of light of a light source (a GaN based semiconductor laser) and a total angle 2/φ of a widening angle of light defining a numerical aperture NA of a collimator optical system (collimator lens) is defined as R=(sin−1NA)×2/φ, the numerical aperture of the collimator optical system (collimator lens) is set so that 2.0≧R≧0.58. Thus, an image exposure device is provided that can suppress stray light of a light source that emits a large amount of stray light.

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Shin-Ichi Nagahama, et al./High Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grow on . . . /Jpn. J.Appl. Phys. vol. 39, No. 7A, p. 1647 (2000).
Matsushita, Optronics, (2000) No. 1, p. 62.

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