Image exposure device and laser exposure device applied thereto

Details Image exposure device and laser exposure device applied thereto Image exposure device and laser exposure device applied thereto

2005-12-20

2005-12-20

Dang, Hung Xuan (Department: 2873)

Optical: systems and elements

Lens

Including a nonspherical surface

C359S738000

Reexamination Certificate

active

06977780

ABSTRACT:
When a ratio R between a total angle φ of a widening angle in a median intensity of light of a light source (a GaN based semiconductor laser) and a total angle 2/φ of a widening angle of light defining a numerical aperture NA of a collimator optical system (collimator lens) is defined as R=(sin−1NA)×2/φ, the numerical aperture of the collimator optical system (collimator lens) is set so that 2.0≧R≧0.58. Thus, an image exposure device is provided that can suppress stray light of a light source that emits a large amount of stray light.

REFERENCES:
patent: 5923636 (1999-07-01), Haruguchi et al.
patent: 5954424 (1999-09-01), Anderson et al.
patent: 6614720 (2003-09-01), Ogata et al.
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patent: 2001/0048063 (2001-12-01), Yanagawa et al.
Shin-Ichi Nagahama, et al./High Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grow on . . . /Jpn. J. Appl. Phys. vol. 39, No. 7A, P1647 (2000).
Matsushita, Optronics, (2000) No. 1, p. 62.

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