Image display device with a transistor on one side of insulating

Details Image display device with a transistor on one side of insulating Image display device with a transistor on one side of insulating

1992-12-01

1994-05-31

Gross, Anita P.

Optical: systems and elements

Holographic system or element

Using a hologram as an optical element

359 57, 359 67, 359 74, G02F 11343, G02F 11335, G02F 11333

Patent

active

053174330

ABSTRACT:
Variations in the individual liquid crystal cells and cross-talk between adjacent pixels are reduced, stable operation is maintained and the aperture and the S/N ratio are increased by providing a transistor and an interconnection layer therefor on one surface of an insulating layer while providing an electrode for applying a voltage to a liquid crystal on the other surface thereof. One major electrode portion of the transistor and the liquid crystal voltage applying electrode are connected to each other using an electrode via an opening. Also, the electrode for connecting the major electrode portion 3 to the liquid crystal voltage applying electrode is provided on the other surface of the insulating layer such that it shield the transistor from light.

REFERENCES:
patent: 4432610 (1984-02-01), Kobayashi et al.
patent: 5121236 (1992-06-01), Ukai et al.
patent: 5233211 (1993-08-01), Hayashi et al.
Patent Abstracts of Japan, vol. 16, No. 255 (Jun. 10, 1992) (E-1214), Abstract of JP 4-056282 (Feb. 24, 1992).
Holmstom et al, "Complete Dielectric Isolation by Highly Selective and Self-Stopping Formation of Oxidized Porous Silicon", Applied Physics Letters, vol. 42, No. 4 (Feb. 1983), pp. 386-388.
Unagami, "Formation Mechanism of Porous Silicon Layer by Anodization in HF Solution", Journal of the Electrochemical Society, vol. 127, No. 2 (Feb. 1980), pp. 476-483.

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