Image display device using transistors each having a...

Details Image display device using transistors each having a... Image display device using transistors each having a...

2006-03-07

2006-03-07

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

C257S061000, C257S401000, C257S406000, C438S162000

Reexamination Certificate

active

07009205

ABSTRACT:
An image display device using transistors each having a polycrystalline semiconductor layer constructed so that drain and source regions are fully activated, and a manufacturing method thereof. The polycrystalline semiconductor layer is so provided that impurity concentrations are easy to control in LDD regions . The image display device further uses transistors having a gate electrode on an upper surface of the semiconductor layer with an insulating film therebetween, a drain region formed on one side of the gate electrode, and a source region formed on another side of the gate electrode. An activated P-type impurity is added to the area underlying the gate electrode, and an activated N-type impurity is added to the area excluding the area underlying the gate electrode.

REFERENCES:
patent: 2002/0005517 (2002-01-01), Inoue
patent: 2003/0013280 (2003-01-01), Yamanaka
patent: 2003/0077886 (2003-04-01), Machida et al.

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