Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2007-04-27
2009-06-23
Pham, Hoai v (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S347000, C257SE29117
Reexamination Certificate
active
07550772
ABSTRACT:
An image display device of reduced cost is provided. A plurality of gate lines, a plurality of signal lines formed to cross the gate lines in a matrix fashion, and a plurality of thin-film transistors are formed on an insulating substrate, and the plurality of gate lines are laminated electrodes. The plurality of thin-film transistors are configured of transistors of two types of an n-channel conductivity type and a p-channel conductivity type. Gate electrodes of thin-film transistors of one type are laminated electrodes of the same configuration as the gate lines, and gate electrodes of thin-film transistors of the other type are configured of electrodes of the same layer as bottom electrodes of the gate lines.
REFERENCES:
patent: 7420211 (2008-09-01), Ohtani et al.
N. Ibaraki, Low-Temperature Poly-Si TFT Technology; SID 1999 Digest; Toshiba LCD R&D Center, Saitama, Japan; pp. 172-175.
Matsumura Mieko
Sato Takeshi
Toyota Yoshiaki
Antonelli, Terry Stout & Kraus, LLP.
Hitachi Displays Ltd.
Pham Hoai v
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