Image display apparatus

Electric lamp and discharge devices – Discharge devices having an electrode of particular material

Reexamination Certificate

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C313S495000, C315S169300

Reexamination Certificate

active

07919911

ABSTRACT:
By making Nd concentration in the tunneling insulating film11smaller than Nd concentration in the base electrode first layer16, the accumulated electric charge amount in the tunneling insulating film11is reduced and afterimage is decreased. By setting a relation between a position of a stack interface of the base electrode13and a thickness of an insulating layer properly, the generation of a device defect is prevented.

REFERENCES:
patent: 6538391 (2003-03-01), Suzuki et al.
patent: 2003/0057825 (2003-03-01), Kusunoki et al.
patent: 2007/0035229 (2007-02-01), Mikami et al.
patent: 2007/0200486 (2007-08-01), Okanan et al.
patent: 10-079221 (1996-09-01), None
patent: 10-112254 (1996-10-01), None
patent: 11-204024 (1998-01-01), None
patent: 2004-363075 (2003-10-01), None
patent: 2005-230504 (2004-02-01), None
patent: 2007-048548 (2005-08-01), None
Nobuyasu Negishi et al., “High Efficiency Electron-Emission in Pt/SiOx/Si/Al Structure”, Jpn. J. Appl. Phys., vol. 36 (1997), pp. L939-L941.
Nobuyoshi Koshida et al., “Cold Electron Emission from Electroluminescent Porous Silicon Diodes”, Jpn. J. Appl. Phys., vol. 34 (1995), pp. L705-L707.
Toshiaki Kusunoki et al., “Emission Current Enhancement of MIM Cathodes by Optimizing the Tunneling Insulator Thickness”, IEEE Transactions on Electron Devices, vol. 49, No. 6, Jun. 2002, pp. 1059-1065.

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