Image device and photodiode structure

Details Image device and photodiode structure Image device and photodiode structure

2005-04-11

2008-09-09

Hoang, Quoc D (Department: 2892)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S451000, C257S233000, C257SE21359, C257SE27155

Reexamination Certificate

active

07422924

ABSTRACT:
The invention provides a photodiode with an increased charge collection area, laterally spaced from an adjacent isolation region. Dopant ions of a first conductivity type with a first impurity concentration form a region surrounding at least part of the isolation region. These dopant ions are further surrounded by dopant ions of the first conductivity type with a second impurity concentration. The resulting isolation region structure increases the capacitance of the photodiode by allowing the photodiode to possess a greater charge collection region while suppressing the generation of dark current.

REFERENCES:
patent: 6069058 (2000-05-01), Hong
patent: 6417074 (2002-07-01), Kopley et al.
patent: 6569700 (2003-05-01), Yang
patent: 6794698 (2004-09-01), Perng et al.
patent: 2003/0211701 (2003-11-01), Desko et al.

Affiliated with

Also associated with

Rating

Image device and photodiode structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Image device and photodiode structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Image device and photodiode structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3988219