Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2011-06-28
2011-06-28
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S433000, C257S787000, C257SE31117
Reexamination Certificate
active
07968883
ABSTRACT:
An image detector which includes an active matrix substrate and a protection substrate bonded to the active matrix substrate by an insulating bonding member, in which the insulating bonding member is bonded to the active matrix substrate through an inorganic insulating film disposed in an area around the periphery of the semiconductor layer.
REFERENCES:
patent: 2002/0131011 (2002-09-01), Izumi
patent: 2003/0096445 (2003-05-01), Izumi et al.
patent: 2006/0033031 (2006-02-01), Takeda et al.
patent: 2001-148475 (2001-05-01), None
patent: 3737343 (2005-11-01), None
FUJIFILM Corporation
Liu Benjamin Tzu-Hung
Ngo Ngan
Sughrue & Mion, PLLC
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