IIL With in and outdiffused emitter pocket

Details IIL With in and outdiffused emitter pocket IIL With in and outdiffused emitter pocket

1979-09-24

1981-03-24

Larkins, William D.

357 43, 357 46, 357 89, 357 92, H01L 2704, H03K 19091

Patent

active

042583799

ABSTRACT:
A semiconductor IC device in which an N-type semiconductor layer is formed in a P-type semiconductor substrate; the N-type layer is divided by a P.sup.+ -type insulation region into plural island regions; and an IIL is formed in a first island region while an NPN transistor is formed in a second island region, wherein an N-type up-diffused layer is formed from the bottom of the first island region up while an N-type well region is formed from the surface of the first island region down, and N.sup.+ -type buried layers are formed near the bottoms of the first and the second island region.

REFERENCES:
patent: 3709746 (1973-01-01), de Witt
patent: 3756873 (1973-09-01), Kaiser
patent: 4045251 (1977-08-01), Graul et al.
patent: 4118251 (1978-10-01), Murrmann et al.
patent: 4132573 (1979-01-01), Kraft
patent: 4144098 (1979-03-01), Rosner
patent: 4149906 (1979-04-01), de la Moneda
patent: 4202006 (1980-05-01), Khajezadeh
patent: 4203126 (1980-05-01), Yim et al.
Allstot et al., 1977, IEEE, Int. Electron Dev. Meeting, Tech. Digest, pp. 175-177, Dec. 1975.
IEEE, J. of Solid State Circuits, Oct. 1972, pp. 340-351.

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