IIL Type semiconductor integrated circuit

Details IIL Type semiconductor integrated circuit IIL Type semiconductor integrated circuit

1977-07-26

1981-03-10

Larkins, William D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 22, 357 23, 357 43, 357 92, 307459, H01L 2704, H03K 19091

Patent

active

042556716

ABSTRACT:
In an integrated injection logic (IIL) type semiconductor integrated circuit, an injector transistor is formed with a field effect transistor (FET) and an inverter transistor is formed with a bipolar transistor (BPT). The drain region of the FET is merged into the base region of the BPT. The base of the BPT constitutes a logic input and the collector of the BPT constitutes a logic output. The FET may be either of the junction type or of the insulated gate type. The carrier injection efficiency can be improved to approximately unity over a wide range of the injection current.

REFERENCES:
patent: 3112411 (1963-11-01), Cook
patent: 3397326 (1968-08-01), Gallagher et al.
patent: 3510735 (1970-05-01), Potter
patent: 3693057 (1972-09-01), Wiedmann
patent: 3766449 (1973-10-01), Bruchez
patent: 3934399 (1976-01-01), Nishimura et al.
patent: 4056810 (1977-11-01), Hart et al.
Wolf, Semiconductors (Wiley-Interscience, N.Y., 1971), pp. 309 and 315.
Pricer et al., IBM Tech. Discl. Bull., vol. 19, No. 5, Oct. 1976, pp. 1630-1631.

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