III-V system compound semiconductor device and method for manufa

Details III-V system compound semiconductor device and method for manufa III-V system compound semiconductor device and method for manufa

1994-09-27

1995-12-26

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

257200, 257201, H01L 3300

Patent

active

054790280

ABSTRACT:
The invention relates to a method for manufacturing a III-V system compound semiconductor device, provides such a new C dopant as alkyl halide (CH.sub.2 I.sub.2 for example) containing carbon (C), iodine (I), and hydrogen (H) for giving a highly p-type conductivity to a GaAs crystal layer, an InGaAs crystal layer or the like as an object of it, and includes a process of forming a p-type III-V system compound semiconductor layer as using a compound containing carbon (C) as a dopant material for giving a p-type conductivity and further containing iodine (I) and hydrogen (H) as impurity.

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patent: 5244829 (1993-09-01), Kim
Kamp, "Carbon Incorporation in Mombe-Grown Ga.sub.0.47 In.sub.0.53 As"-Journal of Crystal Growth 95 (1989) pp. 154-157 North-Holland, Amsterdam.
Buchan "Carbon incorporation in metalorganic vapor phase epitaxy grown GaAs using CH.sub.y X.sub.4y, TMG and AsH.sub.3 "-Journal of Crystal Growth 110 (1991) pp. 405-414 North-Holland.
Chin "Highly carbon-doped p-type Ga.sub.0.5 In.sub.0.5 As and Ga.sub.0.5 In.sub.0.5 P by carbon tetrachloridein gas-source molecular beam epitaxy"-Appl. Phys. Lett., vol. 59, No. 22, 25 Nov. 1991 pp. 2865-2867.
Abernathy "Carbon Doping of III-V Compounds Grown by Mombe"-Journal of Crystal Growth 105 (1990) pp. 375-382.
Shirakashi, Jun-ichi et al, "P-Type Carbon-Doped InGaAs Grown by Metalorganic Molecular Beam Epitaxy", Japanese Journal of Applied Physics, vol. 30, No. 9B, (1991), pp. L1609-L1611.

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