III-V system compound semiconductor device and method for manufa

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117953, 438505, 438508, C30B 2514

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057387222

ABSTRACT:
The invention relates to a method for manufacturing a III-V system compound semiconductor device, provides such a new C dopant as alkyl halide (CH.sub.2 I.sub.2 for example) containing carbon (C), iodine (I), and hydrogen (H) for giving a highly p-type conductivity to a GaAs crystal layer, an InGaAs crystal layer or the like as an object of it, and includes a process of forming a p-type III-V system compound semiconductor layer as using a compound containing carbon (C) as a dopant material for giving a p-type conductivity and further containing iodine (I) and hydrogen (H) as impurity.

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Buchan et al,"Carbon Incorporation in Metal-Organic Vapor Phase Epitoxy Grown GaAs from CHxI4x. HI and Is", J. of Electronic Material vol. 19 (1990) pp. 277-281.
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