III-V solar cells and doping processes

Details III-V solar cells and doping processes III-V solar cells and doping processes

1991-09-05

1993-06-08

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Panel or array

136249, 136255, 136256, 136262, 437 5, 437150, 437153, 437160, 437161, 257431, H01L 31052, H01L 3118, H01L 310304

Patent

active

052175391

ABSTRACT:
Zinc diffusion procedures applicable for large scale manufacture of GaAs and GaSb cells used in tandem solar cells having a high energy conversion efficiency. The zinc doping and carrier concentration are restricted to be less than about 10.sup.19 /cm.sup.3 to obtain good light generated carrier collection and hence good short circuit currents. The amount of zinc that is available for diffusion during a drive-in heating step is restricted. Confinement of zinc and arsenic vapors during the heating step may be effected by use of a proximity source wafer or by an encapsulant layer. The zinc diffusion of GaSb is obtained by a homogeneous light diffusion that is followed by a patterned heavy diffusion to give low ohmic contact with the grid lines. Texture etching of the GaSb solar cell is also compatible with this diffusion process.

REFERENCES:
patent: 3264707 (1966-08-01), Elie
patent: 5091018 (1992-02-01), Fraas et al.
M. Garozzo et al, Solar Energy Materials, vol. 14, pp. 29-49 (1986).
H. J. Hovel et al, IBM Tech. Disc. Bull., vol. 16, No. 7, Dec. 1973, pp. 2083-2084.
G. W. Turner et al, Conf. Record, 16th IEEE Photovoltaic Specialists Conf. (1982), pp. 1153-1156.
L. Fraas et al, IEEE AES Magazine, Nov. 1989, pp. 3-7.
S. G. Bailey, Conf. Record, 20th IEEE Photovoltaic Specialists Conference (1988), pp. 625-628.

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