III-V semiconductors separate confinement superlattice...

Details III-V semiconductors separate confinement superlattice... III-V semiconductors separate confinement superlattice...

2000-04-13

2003-05-27

Davie, James (Department: 2828)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C372S045013, C438S029000

Reexamination Certificate

active

06570179

ABSTRACT:

FIELD OF THE INVENTION
This invention relates to a method for the making of optoelectronic semiconductor devices and more specifically to the making of separate confined superlattice structures prepared from binary III-V compounds.
BACKGROUND OF THE INVENTION
The growth of semiconductor III-V compounds by chemical vapor deposition (CVD) using organometallics and hydrides as elemental sources has developed into a viable process with many potential commercial applications. The metallo-organic chemical vapor deposition (MOCVD) process, based on the pyrolysis of alkyls of group-III elements in an atmosphere of the hydrides of group-V elements, is a common growth technique because it is well adapted to the growth of submicron layers and heterostructures.
In general, III-V semiconductor alloys in the form of binary, ternary, and quaternary compounds are used when forming semiconductor multi-layer devices. A prime concern is the lattice matching of all adjacent layers. Useful physical properties derive directly from adjacent layers which are properly lattice matched. Lattice constants of these alloys can be determined mathematically. For instance see
FIG. 2
of U.S. Pat. No. 5,384,151. For ternary compounds A
x
B
1−x
C the bandgap energy Eg(x) varies with the composition X as follows:
Eg
(
x
)=
Eg
(0)+
bx+cx
2
  (1)
where Eg(0) is the handgap energy of the lower handgap binary compound, c is the bowing parameter, b is the fitting parameter and x≦1. Representative ternary compound bandgaps are as follows. Representative values for b are shown.
Ternary
Direct energy gap E
g
(eV)
Al
x
Ga
1−x
As
E
g
(
x
) = 1.424 + 1.247
x
Al
x
In
1−x
As
E
g
(
x
) = 0.360 + 2.012
x
+ 0.698
x
2
Al
x
Ga
1−x
Sb
E
g
(
x
) = 0.726 + 1.139
x
+ 0.368
x
2
Al
x
Ga
1−x
Sb
E
g
(
x
) = 0.172 + 1.621
x
+ 0.43
x
2
Ga
x
In
1−x
P
E
g
(
x
) = 1.351 + 0.643
x
+ 0.786
x
2
Ga
x
In
1−x
As
E
g
(
x
) = 0.360 + 1.064
x
Ga
x
In
1−x
Sb
E
g
(
x
) = 0.172 + 0.139
x
+ 0.415
x
2
GaP
x
As
1−x
E
g
(
x
) = 1.424 + 1.15
x
+ 0.176
x
2
GaAs
x
Sb
1−x
E
g
(
x
) = 0.726 + 0.502
x
+ 1.2
x
2
InP
x
As
1−x
E
g
(
x
) = 0.36 + 0.891
x
+ 0.101
x
2
InAs
x
Sb
1−x
E
g
(
x
) = 0.18 + 0.41
x
+ 0.58
x
2
 
In
x
Ga
1−x
N Eg
(
x
)=
The lattice constant of ternary alloys can be expressed as
a
alloy
=xa
A
+(1
−x
)
a
B
  (3)
where a
A
and a
B
are the lattice constants of the binary alloys A+B, and x≦1.
For quaternary compounds, the lattice parameter a
0
of an alloy A
x
B
1−x
C
y
D
1−y
is:
a
0
=xya
AC
+x
(1
−y
)
a
AD
+(1
−x
)
ya
BC
+(1
−x
)(1
−y
)
a
BD
  (4)
where x, y≦1.
The bandgap energy of a quaternary compound is:
Eg=xy E
AC
+x
(1
−y
)
E
AD
+(1
−x
)
E
BC
+(1
−x
)(1
−y
)
E
BD
  (5)
where x, y≦1.
The following table shows binary compounds which may be matched to quaternary compounds:
Quaternary
Lattice-matched binary
Wavelength, &lgr; (&mgr;m)
Al
x
Ga
1−x
P
y
As
1−y
GaAs
0.8-0.9
Al
x
Ga
1−x
As
y
Sb
1−y
InP
1
Al
x
Ga
1−x
As
y
Sb
1−y
InAs
3
Al
x
Ga
1−x
As
y
Sb
1−y
GaSb
1.7
Ga
x
In
1−x
P
y
As
1−y
GaAs, InP
  1-1.7
Ga
x
In
1−x
P
y
Sb
1−y
InP, GaSb, AlSb
2
In(P
x
As
1−x
)
y
Sb
1−y
AlSb, GaSb, InAs
2-4
In(Ga
x
Al
1−x
)
y
N
1−y
GaN, InN, AlN
0.2-0.6
(Al
x
Ga
1−x
)
y
In
1−y
P
GaAs, Al
x
Ga
1−x
As
0.57
(Al
x
Ga
1−x
)
y
In
1−y
As
InP
0.8-1.5
(Al
x
Ga
1−x
)
y
In
1−y
Sb
AlSb
1.1-2.1
Based on the above, it can be seen that when one is preparing a semiconductor device with quaternary compounds and ternary compounds, the selection of materials becomes all important and limiting to the selection process, particularly when lattice matching is taken into account.
An object, therefore of the subject invention is the growth of high quality semiconductor devices with wavelength ranges from 0.26 to 10 microns.
A further object of the subject invention is a semiconductor utilizing superlattice structures for confinement layers, active layers, and waveguide layers.
A further object of the subject invention is a semiconductor structure formed solely of binary alloy compounds in a superlattice environment.
These and other objects are obtained by the subject invention wherein there is provided a semiconductor device and a method for making such semiconductor device comprising confinement layers, waveguide layers, and active layer, all of which or partially of which are formed of a superlattice structure of binary III-V compounds. Depending on the selection of III-V compounds, lasers which emit at wavelengths of from 0.2 microns to 10 microns may be prepared.


REFERENCES:
patent: 4675708 (1987-06-01), Onabe
patent: 5075743 (1991-12-01), Behfar-Rad
patent: 5384151 (1995-01-01), Razeghi
patent: 6198112 (2001-03-01), Ishida et al.

Affiliated with

Also associated with

Rating

III-V semiconductors separate confinement superlattice... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with III-V semiconductors separate confinement superlattice..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and III-V semiconductors separate confinement superlattice... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3040059