III-V Semiconductor heterostructure contacting a P-type II-VI co

Details III-V Semiconductor heterostructure contacting a P-type II-VI co III-V Semiconductor heterostructure contacting a P-type II-VI co

1994-05-12

1995-08-15

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

257 97, 257185, 257191, 257201, H01L 29161, H01L 3300

Patent

active

054422043

ABSTRACT:
A semiconductor structure useful in blue light emitting diodes and diode lasers is disclosed. The structure is formed of a substrate of p- type GaAs, a layer of a p- type II-VI compound of the formula Zn.sub.x Q.sub.1-x S.sub.y Se.sub.1-x where Q=Mg, Cd or Mn, 0.5.ltoreq.x.ltoreq.1 and 0.ltoreq.y.ltoreq.1, separated from the substrate by a series of thin epitaxial undoped or p-doped layers including a layer of In.sub.0.5 Al.sub.0.5 P in contact with the layer of the II-VI compound, a layer of In.sub.0.5 Ga.sub.0.5 P or of Al.sub.x Ga.sub.1-x As where x=0.1-0.3 contacting the substrate, a layer of In.sub.0.5 Ga.sub.0.5 P contacting the layer of Al.sub.x Ga.sub.1-x P and at least one layer of In.sub.0.5 Al.sub.2 Ga.sub.0.5-z P where 0<z<0.5 and the value of z decreases in the direction of the layer of In.sub.0.5 Ga.sub.0.5 P provided between and contacting the layer of In.sub.0.5 Al.sub.0.5 P and the layer of In.sub.0.5 Ga.sub.0.5 P.

REFERENCES:
patent: 4916708 (1990-04-01), Hayakawa
patent: 5300791 (1994-04-01), Chen et al.
patent: 5341001 (1994-08-01), Hayashi et al.
patent: 5349596 (1994-09-01), Molva et al.
Yates et al, "Structural And Compositional Integrity Of Lattice-Matched Zn Se S on (100) oriented GaAs," Appl.-Phys. Lett. vol. 51, No. 11, 14 Sep. 1987, pp. 809-810.
M. Onomura et al, blue-green laser diode operation of CdZnSe/ZnSe MQW structures grown on InGaP band offset reduction layers, Electronic Letter, Online No. 19931402, 4 Sep. 1993.

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