III-V Semiconductor growth initiation on silicon using TMG and T

Details III-V Semiconductor growth initiation on silicon using TMG and T III-V Semiconductor growth initiation on silicon using TMG and T

1987-11-13

1990-03-20

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG65, 148DIG72, 148DIG110, 148DIG169, 148DIG149, 156612, 156613, 437107, 437111, 437112, 437946, 437939, 437970, 437976, H01L 21203, H01L 21205, H01L 21365

Patent

active

049101676

ABSTRACT:
A GaAs containing nucleation layer is deposited upon Si, Ge/Si, or other single crystal substrate from triethyl gallium (TEG). Deposition from TEG allows a lower deposition temperature which provides a low level of substrate contamination and improved surface morphology.

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