III-V photocathode with nitrogen doping for increased quantum ef

Details III-V photocathode with nitrogen doping for increased quantum ef III-V photocathode with nitrogen doping for increased quantum ef

1974-12-27

1976-08-31

Segal, Robert

Electric lamp and discharge devices

Geiger-mueller type

357 63, H01J 3906, H01L 3110

Patent

active

039783600

ABSTRACT:
An increase in the quantum efficiency of a III-V photocathode is achieved by doping its semiconductor material with an acceptor and nitrogen, a column-V isoelectronic element, that introduces a spatially localized energy level just below the conduction band similar to a donor level to which optical transitions can occur. This increases the absorption coefficient, .alpha., without compensation of the acceptor dopant. A layer of a suitable I-V, I-VI or I-VII compound is included as an activation layer on the electron emission side to lower the work function of the photocathode.

REFERENCES:
patent: 3408521 (1968-10-01), Dore et al.
patent: 3694759 (1972-09-01), Kasaon et al.
patent: 3761837 (1973-09-01), Leheny et al.
patent: 3872489 (1975-03-01), Hagenlocher
patent: 3873382 (1975-03-01), Groves et al.

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