III-V nitride semiconductor substrate and its production...

Details III-V nitride semiconductor substrate and its production... III-V nitride semiconductor substrate and its production...

2006-05-16

2006-05-16

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S079000, C257S094000

Reexamination Certificate

active

07045808

ABSTRACT:
A III–V nitride semiconductor substrate comprising a III–V nitride semiconductor single crystal at least in a surface portion thereof, the product of [H] and [D] being 1×1025or less, wherein [H] represents the concentration of hydrogen atoms (the number of hydrogen atoms per cm3) in a surface portion of the single crystal, and [D] represents a dislocation density (the number of dislocations per cm2) on a single crystal surface.

REFERENCES:
patent: 6736894 (2004-05-01), Kawahara et al.
patent: 2003/0038302 (2003-02-01), Yanashima et al.
patent: 2003/0183160 (2003-10-01), Fujikura et al.
patent: 2000-252217 (2000-09-01), None
patent: 2003-59835 (2003-02-01), None

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