III-V nitride compound semiconductor device and method for fabri

Details III-V nitride compound semiconductor device and method for fabri III-V nitride compound semiconductor device and method for fabri

1996-12-23

1998-09-08

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Bidirectional rectifier with control electrode

257 94, H01L 3300

Patent

active

058048391

ABSTRACT:
A Ill-V nitride compound semiconductor device of the present invention includes: at least one III-V nitride compound semiconductor layer; and an electrode layer made of non-single crystalline GaN in contact with the III-V nitride compound semiconductor layer.

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patent: 5218216 (1993-06-01), Manabe et al.
patent: 5408120 (1995-04-01), Manabe et al.
patent: 5657335 (1997-08-01), Rubin et al.
Nakamura et al., "Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes" Appl. Phys. Lett. (1994) 64(13):1687-1689.

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