III-V/II-VI Semiconductor interface fabrication method

Details III-V/II-VI Semiconductor interface fabrication method III-V/II-VI Semiconductor interface fabrication method

1995-12-13

1999-03-09

Dutton, Brian

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

H01L 2100

Patent

active

058799621

ABSTRACT:
A method for repeatably fabricating GaAs/ZnSe and other III-V/II-VI semiconductor interfaces with relatively low stacking fault densities in II-VI semiconductor devices such as laser diodes. The method includes providing a molecular beam epitaxy (MBE) system including at least a group III element source, a group II element source, a group V element source and a group VI element source. A semiconductor substrate having a III-V semiconductor surface on which the interface is to be fabricated is positioned within the MBE system. The substrate is then heated to a temperature suitable for III-V semiconductor growth, and a crystalline III-V semiconductor buffer layer grown on the III-V surface of the substrate. The temperature of the semiconductor substrate is then adjusted to a temperature suitable for II-VI semiconductor growth, and a crystalline II-VI semiconductor buffer layer grown on the III-V buffer layer by alternating beam epitaxy. The group II and group VI sources are operated to expose the III-V buffer layer to a group II element flux before exposing the III-V buffer layer to a group VI element flux.

REFERENCES:
patent: 4794606 (1988-12-01), Kondow et al.
patent: 5291507 (1994-03-01), Haase et al.
patent: 5306386 (1994-04-01), de Lyon
patent: 5319219 (1994-06-01), Cheng et al.
patent: 5372970 (1994-12-01), Kubo
patent: 5389800 (1995-02-01), Itaya et al.
patent: 5399206 (1995-03-01), de Lyon
patent: 5481558 (1996-01-01), Ikeda et al.
patent: 5492080 (1996-02-01), Ohkawa et al.
patent: 5556462 (1996-09-01), Celii et al.
Li et al., ZnSe Nucleation on the GaAs (001):Se-(2x1) Surface Observed by Scanning Tunneling Microscopy, J. Vac. Sci. Technol. B, Jul./Aug. 1994, pp. 1-9, 6 figures, 1994.
PCT International Search Report, PCT/US96/19284, mailed Apr. 17, 1997 (7 pages).
Workshop on Critical Issues in Epitaxy, Boulder, Co, USA, 22-24 Jun. 1994, vol. 30, No. 2-3, ISSN 0921-5107, Materials Science & Engineering B (Solid-State Materials for Advanced Technology), Mar. 1995; Switzerland, pp. 73-80, XP002029034 Pashley M D et al.: "Scanning tunneling microscopy studies of the GaAs (001) surface and the nucleation of ZnSe on GaAs (001)".
Thin Solid Film, vol. 231, No. 1/02, 25 Aug. 1993, pp. 190-196, XP000393377 Gunshor R L et al.: "The molecular beam epitaxial growth of wide gap II-VI injection lasers and light-emitting diodes".
Journal of Crystal Growth, vol. 150, No. 1/04, part 02, May 1995, pp. 743-748, XP000627808 Behr T. et al.: "Structural and electrical properties of ZnSe laser diodes optimized by transmission electron microsopy, reflection high energy electron diffraction, x-ray diffraction and C-V profiling".
Kamata et al. "Characterization of ZnSSe on GaAs by Etching and X-Ray Diffraction," Journal of Crystal Growth 142 (1994), pp. 31-36.
Guha, et al. "Structural Quality and the Growth Mode in Epitaxial ZnSe/GaAs (100)," J. Appl. Phys. 73 (5), 1 Mar. 1993, pp. 2294-2300.
Gaines et al. "Structural Properties of ZnSe Films Grown by Migration Enhanced Epitaxy," J. Appl. Phys. 73 (6), 15 Mar. 1993, pp. 2835-2840.
Li et al. "ZnSe Nucleation on the GaAs (001):Se-(2x1) Surface Observed by Scanning Tunneling Microscopy," J. Vac. Sci. Technol. B (Jul./Aug. 1994), 9 pages of text and 6 pages of figures.
Cheng et al. "Molecular-beam Epitaxy Growth of AnSe Using a Cracked Selenium Source", J. Vac. Sci. Technol. B 8 (2), Mar./Apr. 1990, pp. 181-186.
Ludeke et al. "MBE Surface and Interface Studies", The Technology and Physics of Molecular Beam Epitaxy, pp. 555-565.
Kuo et al., Dependence of the density and type of stacking faults on the surface treatment of the substrate and growth mode in ZnS.sub.x Se.sub.1-x /ZnSe buffer layer/GaAs heterostructures. Appl. Phys. Lett 67 (22), 27 Nov. 1995, pp. 3298-3300.

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