Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Patent
1998-09-18
2000-03-28
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
257197, 257201, 257565, 257580, 257582, 257615, H01L 310328
Patent
active
060435208
ABSTRACT:
A hetero-junction bipolar transistor having high reliability wherein a ballast resistance is exactly controlled and deterioration in current stability is eliminated. A GaAs ballast resistor layer is provided in a hetero-junction bipolar transistor having a GaAs emitter layer, an InGaP spacer layer, and a GaAs base layer, preventing a notch from being formed in the conduction band at the interface of the emitter layer and the ballast resistor layer, exactly controlling the ballast resistance. The AlGaAs layer is prevented from trapping impurities and the current stability is prevented from deteriorating.
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Twynam et al., "Thermal Stabilization Of AlGaAs/GaAs Power HBTs using n-AL.sub.x Ga.sub.1-x As Emitter Ballast Resistors With High Thermal Coefficient of Resistance", Solid State Electronics, vol. 38, No. 9, 1995, pp. 1657-1661.
Hattori Ryo
Yamamoto Yoshitsugu
Baumeister Bradley William
Jackson, Jr. Jerome
Mitsubishi Denki & Kabushiki Kaisha
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