III-V group nitride system semiconductor substrate

Details III-V group nitride system semiconductor substrate III-V group nitride system semiconductor substrate

2006-06-06

2006-06-06

Blum, David S. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Low workfunction layer for electron emission

Reexamination Certificate

active

07057204

ABSTRACT:
A III–V group nitride system semiconductor substrate has III–V group nitride system single crystal grown on a hetero-substrate. The III–V group nitride system semiconductor substrate has a flat surface and satisfies the relationship of θ>α, where θ [deg ] is given as an average in angles of the substrate surface to low index surfaces closest to the substrate surface measured at a plurality of arbitrary points in plane of the substrate, and a variation range of the measured angles to θ is represented by ±α [deg ].

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