Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2006-10-31
2008-10-14
Louie, Wai-Sing (Department: 2814)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C438S047000, C438S481000, C438S977000, C257SE29003
Reexamination Certificate
active
07435608
ABSTRACT:
A III-V group nitride system semiconductor self-standing substrate is made of III-V group nitride system semiconductor single crystal with a hexagonal crystal system crystalline structure. The substrate is provided with a surface that is off-oriented 0.09 degrees or more and 24 degrees or less in the a-axis or m-axis direction from C-face of the substrate.
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Hitachi Cable Ltd.
Louie Wai-Sing
McGinn IP Law Group PLLC
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